IGBT+IR2110驱动电路图

IGBT+IR2110驱动电路图

　　IR2110驱动IGBT电路如图所示。电路采用自举驱动方式，VD1为自举二极管，C1为自举电容。接通电源，VT2导通时Cy通过VDt进行充电。这种电路适用于驱动较小容量的IGBT.对于IR2110,当供电电压较低时具有使驱动器截止的保护功能。自举驱动方式支配着VT2的导通电压，因此电压较低的保护功能是其必要条件。若驱动电压较低时驱动IGBT,则IGBT就会发生热损坏。VD1选用高速而耐压大于600V的ERA38-06、ERB38-06等二极管。

IR2110 drives IGBT circuit as shown in the figure. The circuit adopts bootstrap drive mode, VD1 is a bootstrap diode, and C1 is a bootstrap capacitor. When the power is turned on, Cy is charged through VDt when VT2 is turned on. This kind of circuit is suitable for driving smaller capacity IGBT. For IR2110, when the power supply voltage is low, it has the protection function of turning off the driver. The bootstrap drive mode dominates the turn-on voltage of VT2, so a lower voltage protection function is a necessary condition. If the IGBT is driven at a low driving voltage, the IGBT will be thermally damaged. VD1 selects diodes such as ERA38-06 and ERB38-06 with high speed and withstand voltage greater than 600V.