74hc244中文资料参数

CD54HC240/74HC240/CD54HCT240/74HCT240
CD74HC241/CD54HCT241/74HCT241
CD54HC244/74HC244, CD54HCT244/74HCT244

CD54HC240/74HC240/CD54HCT240/74HCT240/CD74HC241/CD54HCT241/74HCT241/CD54HC244/74HC244,/CD54HCT244/74HCT244是专门设计的8 缓冲器及线驱动器，以改善三态存贮地址驱动器，时钟驱动器和总线定向收发器的性能和集成度。

Absolute Maximum Ratings绝对最大额定值：DC Supply Voltage, 直流供电电压 VCC -0.5V to 7VDC Input Diode Current, 直流输入二极管电流 IIK For VI -0.5V or VI VCC + 0.5V ±20mADC Output Diode Current, IOK For 直流输出二极管电流 VO -0.5V or VO VCC + 0.5V ±20mADC Drain Current, per Output,直流漏电流，每路输出，输入输出为 IO For -0.5V VO VCC + 0.5V ±35mADC Output Source or Sink Current per Output Pin, IO For VO -0.5V or VO VCC + 0.5V ±25mADC VCC or Ground Current, ICC ±70mA

真值表：输入输出输出控制数据GAYLLHLHLHXZ

HC HCT 引脚图HC HCT 功能图

Operating Conditions操作条件Temperature Range (TA)温度范围-55℃ to 125℃Supply Voltage Range, 电源电压范围，虚拟通道连接 VCCHC Types2V to 6VHCT Types4.5V to 5.5VDC Input or Output Voltage, VI, VO 输入或输出直流电压0V to VCCInput Rise and Fall Time 输入上升和下降时间2V1000ns (最大)4.5V500ns (最大)6V400ns (最大)

Thermal Information热特性：Thermal Resistance 热电阻(Typical, Note 1)θJAE (PDIP) 封装69℃/WM (SOIC) 封装58℃/WPW (TSSOP) 封装83℃/WMaximum Junction Temperature 最高结温150℃Maximum Storage Temperature Range 最大存储温度范围-65℃ to 150℃Maximum Lead Temperature 焊接最高温度（焊接10秒）(SOIC - Lead Tips Only)300℃

DC Electrical Specifications直流电气规格：Parameter 参数Symbol 符号TEST Conditions 测试条件25℃-40℃TO85℃-55℃TO125℃UNIT 单位VI (V)IO (mA)VCC (V)最小典型最大最小最大最小最大High Level Input Voltage输入高电平电压VIH--21.5--1.5-1.5-V4.53.15--3.15-3.15-V64.2--4.2-4.2-VLOW Level Input Voltage 输入低电平电压 VIL--2--0.5-0.5-0.5V4.5--1.35-1.35-1.35V6--1.8-1.8-1.8VHIGH Level Output Voltage输出高电平电压 CMOS负载VOHVIH or VIL-0.0221.9--1.9-1.9-V-0.024.54.4--4.4-4.4-V-0.0265.9--5.9-5.9-VHIGH Level Output Voltage输出高电平电压 TTL负载-64.53.98--3.84-3.7-V-7.865.48--5.34-5.2-VLow Level Output Voltage 输出低电平电压 CMOS负载VOLVIH or VIL0.022--0.1-0.1-0.1V0.024.5--0.1-0.1-0.1V0.026--0.1-0.1-0.1VLow Level Output Voltage输出低电平电压 TTL负载64.5--0.26-0.33-0.4V7.86--0.26-0.33-0.4VInput Leakage Current输入漏电流IIVCC or GND-6--±0.1-±1-±1μAQuiescent Device Current静态电流ICCVCC or GND06--8-80-160μA

DC Electrical Specifications直流电气规格（续）Parameter 参数Symbol 符号TEST Conditions 条件25℃-40℃ TO 85℃-55℃ TO 125℃UNIT 单位VI (V)IO (mA)VCC (V)最小典型最大最小最大最小最大Three-State Leakage Current三态泄漏电流IOZVIL or VIH-6--±0.5-±0.5-±10μAHigh Level Input Voltage输入高电平电压VIH--4.5 to 5.52--2-2-VLOW Level Input Voltage 输入低电平电压VIL--4.5 to 5.5--0.8-0.8-0.8VHIGH Level Output Voltage输出高电平电压 CMOS 负载VOHVIH or VIL-0.024.54.4--4.4-4.4-VHIGH Level Output Voltage输出高电平电压 TTL负载-64.53.98--3.84-3.7-VLow Level Output Voltage 输出低电平电压 CMOS负载VOLVIH or VIL0.024.5--0.1-0.1-0.1VLow Level Output Voltage 输出低电平电压TTL负载64.5--0.26-0.33-0.4VInput Leakage Current输入漏电流IIVCC to GND05.5--±0.1-±1-±1μAQuiescent Device Current静态电流ICCVCC or GND05.5--8-80-160μAAdditional Quiescent Device Current Per Input Pin: 1 UNIT Load附加静态目前的输入引脚： 1单位负载ΔICC (Note 2)VCC -2.1-4.5 to 5.5-100360-450-490μAThree-State Leakage Current三态泄漏电流IOZVIL or VIH-5.5--±0.5-±5-±10μA

Switching Specifications开关特性规格 CL = 50pF, Input tr, tf = 6nsParameter 参数Symbol 符号TEST CONDI-TIONSVCC (V)25℃-40℃ TO 85℃-55℃ TO 125℃