UCC27210参考设计电路|高频高侧/低侧驱动器应用电路

UCC27210MOSFET驱动器能够直接处理-10VDC，这增加了稳健耐用性，并且可实现与栅极驱动变压器的直接对接，而无需使用整流二极管。此篇主要介绍了UCC27210特性、应用范围、参考设计电路以及电路分析，帮助大家缩短设计时间。

UCC27210特性：最大引导电压120V直流；4A吸收，4A源输出电流；2ns延迟匹配；-40℃至140℃的额定温度范围

UCC27210典型应用范围：半桥和全桥转换器；D类音频放大器；有源箝位正激式转换器；高电压同步降压型转换器

UCC27210参考设计应用电路：

图1UCC27210内部结构图

TheUCC27210 devices represent Texas Instruments’ latest generation of high voltage gate drivers which are designed to drive both the high side and low side of N-channel MOSFETs in a half-/full-bridge or synchronous buck configuration. The floating high-side driver can operate with supply voltages of up to 120 V.

图2UCC27210参考设计图

Theswitching node (HS pin) of the UCC2721x can handle –18 V maximum which allows the high-side channel to be protected from inherent negative voltages caused parasitic inductance and stray capacitance. The UCC27210 (Pseudo-CMOS inputs) and UCC27211 (TTL inputs) have increased hysteresis allowing for interface to analog or digital PWM controllers with enhanced noise immunity.

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