CGD15HB62P参考设计电路|MOSFET驱动器应用电路

CGD15HB62P双通道SiCMOSFET驱动器是针对SiC进行了优化的隔离式半桥栅极驱动器。此篇主要介绍了CGD15HB62P特性、应用范围、参考设计电路以及电路分析，帮助大家缩短设计时间。

CGD15HB62P：2个输出通道；隔离式电源；直接安装式低电感设计；短路保护

欠压保护

CGD15HB62P典型应用范围：用于1.2kVSiCMOSFET模块的驱动器；高达900V的直流总线电压

CGD15HB62P参考设计应用电路：

图1CGD15HB62P内部结构图

Default gate resistor for Rg is 10 for the gate ON and OFF. The user can control the gate turn ON and OFF speed by changing Rg to a lower value and gain better efficiency. The user can also control the Gate turn-ON and OFF speed independently by populating Rg.off and D1.

图2CGD15HB62P参考设计图

Designed to directly mount to Cree 62 mm style power modules. Four (4) mounting holes for 4x M4-8, Nylon screws are provided to secure the board to a bracket or enclosure (0.5 Nm) for additional support.

CGD15HB62P中文数据手册:点击下载

更多原理图及源代码热门应用电路：立刻点击